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Assoc. prof. Mgr. Jakub Holovský, Ph.D.

E-mail: holovsky@fzu.cz, jakub.holovsky@fel.cvut.cz
Telephone: +420 224 352 167 / +420 220 318 516 / +420 775 922 671
Born: 1981, Praha, Czech Republic
Nationality: Czech

Academic experience

2018 Czech Technical University, Faculty of Electrical Engineering, habilitation thesis: “Spectroscopy of the optical absorption edge of solar cell materials”
2006-2012 Charles University in Prague, Faculty of Mathematics and Physics – Quantum Optics and Optoelectronics doctoral thesis: “Silicon solar cells: methods for experimental study and evaluation of material parameters in advanced structures”
2000-2006 Charles University in Prague, Faculty of Mathematics and Physics – Physics of Condensed and Macromolecular Matter, diploma thesis: “Photovoltaic silicon solar cells: study of materials and solar structures by Fourier photocurrent spectroscopy”

Work experience

2014-present Associate professor at Czech Technical University, Faculty of Electrical Engineering, teaching materials and photovoltaics, supervising students, investigating projects, developing of thin film technologies for novel photovoltaic devices
2012-2013 Post-doc fellowship at École Polytechnique Fédérale de Lausanne, Neuchâtel, Switzerland, study of atomic structure of crystalline silicon surfaces by Attenuated Total Reflectance - FTIR spectroscopy.
2010-2011 PhD scholarship at École Polytechnique Fédérale de Lausanne, Neuchâtel, Switzerland, developing new method for I-V characterization of tandem devices.
2004-present Researcher at Institute of Physics of the ASCR v.v.i. Prague, Investigation of European projects of 6th and 7th framework targeted to increasing efficiency of thin-film solar cells and transfer to industry. Optical characterization of new materials for photovoltaics based on silicon, (transparent) conductive oxides and CH3NH3PbI3 perovskites by photocurrent and photothermal methods. Developing methods of optical spectroscopy sensitive to surfaces and ultrathin layers.

National and International projects

2018-2020 PI: Czech Science Foundation project „Manipulating properties of transition metal oxides interfaces“ (budget 140 kEUR) the aim is to develop a comprehensive model of oxygen vacancies and hydrogen passivation and their role at the interfaces and interfaces with other semiconductors. DFT calculations are used to predict FTIR spektra as well as density of states.
2017-2022 Key person: National project from Structural funds MEYS-OPVVV „Centre of Advanced Photovoltaics“ (budget 830 kEUR) The aim is to develop new technology of selective contacts to the silicon absorber based on silicon oxide passivation and metal oxides.
2012-2015 7th EU Framework program project „Fast-track - Accelerated development and prototyping of nano-technology-based high-efficiency thin-film silicon solar modules " (budget 390 kEUR)
2012-2013 Swiss Sciex-NMSch program project: “HITS - Heterointerface tests of stability”, FTIR pectroscopic study of interfaces of crystalline silicon / amorphous silicon heterojunctions and their stability (budget 65 kEUR)

English – First Certificate, French – communicative level

Publication Activity

>40 original peer reviewed international scientific papers, 1 book chapter, >20 conference proceedings, 1 patent, oral contribution on >5 international conferences. Citation index: >1850 citations, h-index: 13 (WoS, without self citations, April 2020).

Selected related publications:

1. J. Holovský, et al., Lead Halide Residue as a Source of Light-Induced Reversible Defects in Hybrid Perovskite Layers and Solar Cells, ACS Energy Lett. 4 (2019) 3011 – 3017, doi: 10.1021/acsenergylett.9b02080
2. M. Ledinsky, T. Schönfeldová, J. Holovský, E. Aydin, Z. Hájková, L. Landová, N. Neyková, A. Fejfar, S. De Wolf. Temperature Dependence of the Urbach Energy of in Lead Iodide Perovskites J. Phys. Chem. Lett., 10 (2019), pp 1368–1373, doi: 10.1021/acs.jpclett.9b00138
3. F. Ventosinos, J. Klusáček, T. Finsterle, K. Künzel, F.-J. Haug, J. Holovský Shunt Quenching and Concept of Independent Global Shunt in Multijunction Solar Cells IEEE J. Photovoltaics 8 (2018) 1005 – 1010 doi: 10.1109/JPHOTOV.2018.2828850
4. J. Holovský, et al. Photocurrent Spectroscopy of Perovskite Layers and Solar Cells: A Sensitive Probe of Material Degradation J. Phys. Chem. Lett. 8 (2017) 838-843. doi:10.1021/acs.jpclett.6b02854
5. S. Morawiec, J. Holovský, M. J. Mendes, M. Müller, et al., Experimental quantification of useful and parasitic absorption of light in plasmon-enhanced thin silicon films for solar cells application Sci. Rep. 6 (2016) 22481(1) - 22481(10). doi:10.1038/srep22481
6. J. Holovský, et al., Effect of the thin-film limit on the measurable optical properties of graphene, Sci. Rep. 5 (2015) 15684 (1) - 15684 (6). doi: 10.1038/srep15684
7. J. Holovský, S. De Wolf, P. Jiříček, Ch. Ballif , Attenuated total reflectance Fourier-transform infrared spectroscopic investigation of silicon heterojunction solar cells, Rev. Sci. Instrum. 86 (2015) 073108-1 - 073108-6. doi: 10.1063/1.4926749
8. M. Ledinský, P. Löper, B. Niesen, J. Holovský, et al, Raman Spectroscopy of Organic - Inorganic Halide Perovskites, J. Phys. Chem. Lett. 6 (2015) 401-406. doi: 10.1021/jz5026323
9. S. De Wolf, J. Holovsky, S.-J. Moon, et al. Organometallic Halide Perovskites: Sharp Optical Absorption Edge and Its Relation to Photovoltaic Performance, J. Phys. Chem. Lett. 5 (2014) 1035 - 1039, doi: 10.1021/jz500279b
10. J. Holovský, C. Ballif, Thin-film limit formalism applied to surface defect absorption, Opt. Express 22 (2014) 31466 - 31472. doi: 10.1364/OE.22.031466
11. G. Bugnon, G. Parascandolo, T. Söderström, P. Cuony, M. Despeisse, S. Hänni, J. Holovský, F. Meillaud, C. Ballif A New View of Microcrystalline Silicon: The Role of Plasma Processing in Achieving a Dense and Stable Absorber Material for Photovoltaic Applications Adv. Funct. Mater. 22 (2012) 3665 – 3671, doi: 10.1002/adfm.201200299
12. J. Holovský, M. Bonnet-Eymard, M. Boccard, M. Despeisse, C. Ballif, Variable light biasing method to measure component I-V characteristics of multi-junction solar cells, Sol. Energ. Mat. Sol. C. 103 (2012) 128 – 133, doi: 10.1016/j.solmat.2012.04.014
13. J. Holovský, M. Bonnet-Eymard, G. Bugnon, P. Cuony, M. Despeisse, C. Ballif, Measurement of the open circuit voltage of individual sub-cells in a dual-junction solar cell, IEEE J. Photovoltaics 2 (2012) 164 – 168, doi: 10.1109/JPHOTOV.2011.2178232
14. J. Holovský, et al., Time evolution of surface defect states in hydrogenated amorphous silicon studied by photothermal and photocurrent spectroscopy and optical simulation, J. Non-Cryst. Solids 358 (2012) 2035 – 2038, doi: 10.1016/j.jnoncrysol.2011.12.031

Patent (co-author)

M. Vaněček, A. Poruba, Z. Remeš, J. Holovský, A. Purkrt, O. Babchenko, K. Hruška, N. Neykova, U. Kroll, J. Meier. Photovoltaic cell and method for producing a photovoltaic cell, International patent PCT, publ. no. WO/2011/033464, publ. date 24.3.2011, applicants: Oerlikon Solar a FZÚ AV ČR